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Provisional Data Sheet No. PD 9.809
HEXFET(R) TRANSISTOR
200 Volt, 0.060, HEXFET
HEXFET technology is the key to International Rectifier's advanced line of power MOSFET transistors. The efficient geometry design achieves ver y low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, high energy pulse circuits and virtually any application where high reliability is required. The HEXFET transistor's totally isolated package eliminates the need for additional isolating material between the device and the heatsink. This improves thermal efficiency and reduces drain capacitance.
IRFI260
N-CHANNEL
Product Summary
Part Number IRFI260 BVDSS 200V RDS(on) 0.060 ID 45A*
Features:
n n n n n
Hermetically Sealed Electrically Isolated Simple Drive Requirements Ease of Paralleling Ceramic Eyelets
Absolute Maximum Ratings
Parameter
ID @ VGS = 10V, TC = 25C I D @ VGS = 10V, TC = 100C IDM PD @ TC = 25C VGS EAS I AR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Lead Temperature Weight * ID current limited by pin diameter 300 (0.063 in. (1.6mm) from case for 10 sec.) 10.9 (typical)
IRFI260
45* 29 180 300 2.4 20 700 45 30 4.3 -55 to 150
Units A
W W/K V mJ A mJ V/ns
oC
g
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IRFI260 Device
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Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified)
Parameter
BV DSS Drain-to-Source Breakdown Voltage BVDSS/TJ Temp. Coefficient of Breakdown Voltage R DS(on) Static Drain-to-Source On-State Resistance V GS(th) Gate Threshold Voltage g fs Forward Transconductance I DSS Zero Gate Voltage Drain Current
Min.
200 -- -- -- 2.0 22 -- -- -- -- -- -- -- -- -- -- -- --
Typ. Max. Units
-- -- V
Test Conditions
I GSS I GSS Qg Q gs Q gd t d(on) tr t d(off) tf LD
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance
VGS = 0V, ID = 1.0 mA 0.24 -- V/C Reference to 25C, ID = 1.0 mA -- 0.060 VGS = 10V, ID =29A -- 0.068 VGS = 10V, ID = 45A -- 4.0 V VDS = VGS, I D = 250A -- -- S( ) VDS 15V, IDS = 29A -- 25 VDS =0.8 x Max Rating,VGS=0V A -- 250 VDS = 0.8 x Max Rating VGS = 0V, TJ = 125C -- 100 VGS = 20V nA -- -100 VGS = -20V -- 230 VGS =10V, I D = 45A -- 40 nC VDS = Max. Rating x 0.5 -- 110 -- 29 VDD = 100V, ID =45A, -- 120 ns RG = 2.35, VGS =10V -- 110 -- 8.7 92 --
Measured from the drain lead, 6mm (0.25 in.) from package to center of die. Modified MOSFET symbol showing the internal inductances.
LS
Internal Source Inductance
--
8.7
--
nH
Measured from the source lead, 6mm (0.25 in.) from package to source bonding pad.
C iss C oss C rss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
-- -- --
5100 1100 280
-- -- --
pF
VGS = 0V, VDS = 25V f = 1.0 MHz
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IRFI260 Device
Source-Drain Diode Ratings and Characteristics
Parameter
IS I SM Continuous Source Current (Body Diode) Pulse Source Current (Body Diode)
Min. Typ. Max. Units
-- -- -- -- 45* 180 A
Test Conditions
Modified MOSFET symbol showing the integral reverse p-n junction rectifier.
VSD Diode Forward Voltage t rr Reverse Recovery Time Q RR Reverse Recovery Charge ton Forward Turn-On Time
-- -- --
-- -- --
1.8 420 4.9
V ns C
Tj = 25C, IS = 45A, VGS = 0V Tj = 25C, IF = 45A, di/dt 100A/s VDD 50V
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC RthJA RthCS Junction-to-Case Junction-to-Ambient Case-to-Sink
Min. Typ. Max. Units Test Conditions
-- -- -- -- 0.42 -- 30 0.21 -- K/W typical socket mount mounting surface flat, smooth
Repetitive Rating; Pulse width limited by
maximum junction temperature.
ISD 45A, di/dt 130 A/s,
VDD BVDSS, TJ 150C Suggested RG = 2.35 Pulse width 300 s; Duty Cycle 2% K/W = C/W W/K = W/C
@ VDD = 50V, Star ting T J = 25C,
EAS = [0.5 * L * (IL2) * [BVDSS/(BVDSS-VDD)] Peak IL = 45A, VGS = 10V, 25 R G 200
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IRFI260 Device
Case Outline and Dimensions -- TO-259AA
NOTES: 1. Dimensioning and tolerancing per ANSI Y14.5M - 1982. 2. All dimensions in millimeters (inches)
LEGEND: 1. Drain 2.. Source 3. Gate
CAUTION BERYLLIA WARNING PER MIL-PRF-19500
Packages containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them which will produce beryllia or beryllium dust. Furthermore, beryllium oxides packages shall not be placed in acids that will produce fumes containing beryllium.
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 7/96
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